Tantalum (V) oxide (CAS number 1314-61-0), commonly known as tantalum pentoxide, is a dielectric material with a high dielectric constant of 22-25 (amorphous). Owing to its high dielectric constant, tantalum oxide is widely used in the production of capacitors. Tantalum oxide is also used as a gate dielectric in cadmium sulfide (CdS) field-effect transistors (FETs), demonstrating an electron mobility of 2.97 cm2/V·s with a low threshold voltage of 1.0 V.

Tantalum oxide also serves as electron transport layers and passivation layers in perovskite solar cells. Ta2O5 enhances the open-circuit voltage of mesoscopic perovskite solar cells, contributing to an excellent power conversion efficiency (PCE) of 21.3% (FTO/mesoporous-TiO2/Ta2O5/perovskite/spiro-OMeTAD/Au).

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