DCB-BPA is a self-assembled monolayer material with a 5,9-dibromo-7H-dibenzo[c,g]carbazole terminal function group, a butyl linker and a phosphonic acid head anchor. DCB-BPA is the brominated derivative of 4PADCB, another hole selective face-on contact interface material for highly efficient and stable inverted perovskite solar cells.

DCB-BPA was initially developed as the hole selective layer for wide bandgap (WBG) perovskite solar cells. DCB-BPA contact can effectively enhance the energy level alignment and suppress the interfacial nonradiative recombination losses by enabling the growth of high-quality WBG perovskite with an improved buried interface and reduced trap state density.

With a very low VOC loss of 431 mV, perovskite solar cell device based on a 1.77 eV WBG perovskite absorber and DCB-BPA self-assembled monolayer interface chieved a power conversion efficiency (PCE) of 18.88%, with an impressive VOC of up to 1.339 V. Also, due to the improved interface charge extraction/transport, PM6:BTP-eC9 based polymer organic solar cell delivered a power conversion efficiency of 18.16% and an outstanding short-circuit current of ~ 28.07 mA cm−2, outperforming devices based on conventional PEDOT:PSS hole transport layer.

Serving as hole selective contact for organic solar cells and perovskite solar cells, DCB-BPA is an alternative to PEDOT:PSS with superior performance with the convenience of solution deposition at low concentration, i.e. 1 mM.

Solution Processing Procedure

Typical processing solvents: Ethanol, methanol, IPA, DMF, THF
Typical concentration: 0.1 - 1.2 mg/ml
Typical processing procedure: 

For DCB-BPA based perovskite devices, DCB-BPA is dissolved in anhydrous ethanol with a concentration of 0.1, 0.2, or 0.4 mg/mL. The DCB-BPA solution is spin-coated for 30 s at the speed of 3000 rpm, and then annealed for 10 min at 120 ℃ (DOI: 10.1039/D3EE02839A). 

For DCB-BPA based OSCs, DCB-BPA is dissolved in methanal with a concentration of 0.8, 1.0, or 1.2 mg/mL. The DCB-BPA solution is spin-coated onto ITO substrates for 30 s at the speed of 3000, 4000 or 5000 rpm, and then annealed for 10 min at 100 °C in air (DOI: 10.1002/adfm.202303653).

General Information

Product Details

Chemical Structure