Phen-NaDPO is a cathode interlayer material (CIM) with a triarylphosphine oxide and a 1,10-phenanthrolinyl units. Being electron deficient, Phen-NaDPO shows efficient electron-transport properties with a high Tg of 116 °C. The steric triarylphosphine oxide moiety enables Phen-NaDPO high solubility in both weakly polar and polar solvents. As a universal cathode modifier, Phen-NaDPO greatly decreases the work function of various substrates including Ag, ITO, highly ordered pyrolytic graphite (HOPG), SnO2 and ZnO.

For example, while Phen-NaDPO is spin-coated with the active materials together on SnO2 substrate, it spontaneously migrates to the SnO2 interface. As a result, an in situ modification layer forms on the SnO2 substrate, driven by thermodynamic forces due to its high surface energy. The migration and the self-organization of Phen-NaDPO onto the substrate surface effectively reduce the work function of SnO2. This coating technique also enhances the ordered molecular stacking thus manipulates the vertical morphology of the active layer, suppressing the surface trap-assisted recombination and minimizing the charge extraction. Photovoltaic device based on PM6:Y6 as the active layer with Phen-NaDPO additive exhibits significantly improved device stability and photovoltaic performance.

Also, organic photodetector with the device structure of ITO/PEDOT:PSS/D18:Y6/Phen-NaDPO/Ag shows a responsivity of 680 mA W-1 and a detectivity of 6.35 × 1013 Jones at a wavelength of 850 nm. D18:Y6 NIR organic devices demonstrate a wide photosensitivity linearity and ultrafast photoresponse time as fast as 1.8 μs upon laser light excitation without an external driven voltage.

General Information

Chemical Structure

Chemical structure of Phen-NaDPO, CAS: 1480371-38-7

Product Details