CAS Number 205327-13-5
4,4'-(Diphenylsilanediyl)bis(N,N-diphenylaniline) (TSBPA) is diphenylsilyl based with two electron donating triphenylamine units. For its electron rich nature, TSBPA is normally used as a high triplet energy hole transport material for blue phosphorescent organic light-emitting diodes (PHOLEDs).
Also due to its electron donating nature, TSBPA can also be used together with electron accepting materials to form exciplex as emitting layer materials. Green PhOLEDs based on TSBPA:PO-T2T exciplex showed TADF emission with close to the maximum theoretical power efficiency and EQE of 60.9 cd/A, 71 Im/W and 20% respectively.
CAS number | 205327-13-5 |
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Chemical formula | C48H38N2Si |
Molecular weight | 670.91 g/mol |
Absorption | λmax 309 nm in DCM |
Fluorescence | λem 376 nm in DCM |
HOMO/LUMO | HOMO = 5.51 eV, LUMO = 2.30 eV, ET =2.9 eV [1] |
Full chemical name | 4,4'-(Diphenylsilanediyl)bis(N,N-diphenylaniline) |
Synonyms | TSBPA |
Classification / Family | Triphenylamine derivatives, Hole transport layer (HTL), Electron blocking layer (EBL), TADF exciplex materials, Phosphorescent organic light-emitting diodes (PHOLEDs), Sublimed materials |
Purity | Sublimed >99.0% (HPLC) |
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Melting point | mp = 213 °C, Tg = 84 °C |
Appearance | White powder/crystals |
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed materials.
Device structure | ITO/ NPB (30 nm)/TSBPA (10 nm)/TSBPA:POT2T (20nm)/PO-T2T(50 nm)/LiF(1 nm)/Al (100 nm) [1] |
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Colour |
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Max. Luminance | 31,000 cd/m2 |
Max. EQE | 20.0% |
Max. Current Efficiency | 60.9 cd/A |
Max. Power Efficiency | 71.0 Im/W |
Device structure | ITO/NPB (40 nm)/TSBPA (10 nm)/DDMA-TXO2 (I):DPEPO (30 nm)/DPEPO (10 nm)/TPBi (40 nm)/LiF/Al [2] |
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Colour |
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Max. Luminance | 4,204 cd/m2 |
Max. EQE | 21.2% |
Max. Current Efficiency | 36.8 cd/A |
Max. Power Efficiency | 27.5 Im/W |
Device structure | ITO/NPB (40 nm)/TSBPA (10 nm)/DDMA-TXO2 (III):DPEPO (30 nm)/DPEPO (10 nm)/TPBi (40 nm)/LiF/Al [2] |
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Colour |
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Max. Luminance | 2,765 cd/m2 |
Max. EQE | 22.6% |
Max. Current Efficiency | 31.7 cd/A |
Max. Power Efficiency | 24.3 Im/W |
Device structure | ITO/NPB (40 nm)/TSBPA (10 nm)|TSBPA:PO-T2T 1:1 in 50 vol % UGH-3 (40 nm)|POT2T (50 nm)|LiF (1 nm)|Al (100 nm) [3] |
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Colour |
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Max. EQE | 19.2 % |
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