BSB, 4,4'-di(triphenylsilyl)-biphenyl, has a structure of two triphenyllsilanes joined by a biphenyl spacer. The other family member, UGH-2, has a phenyl spacer.

Having a deep HOMO energy level and a wide bandgap, BSB is normally used as phosphorescent host for blue light-emitting materials such as FIrPic. When compared to UGH-2, it has higher glass transition temperature (Tg = 100 °C) to afford better morphology of OLED device films for higher device performance and stability. Electroluminescence devices using FIrpic as the blue phosphorescence dopant and UGH2, BSB, and BST (4,4″-bis(triphenylsilanyl)-(1,1′,4′,1″)-terphenyl) as the hosts show that BSB provides best device performance.

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed materials.

Chemical Structure

Chemical structure of 4,4'-di(triphenylsilyl)-biphenyl (BSB), CAS 18826-13-6

Device Structure(s)

Device structure	ITO (125 nm)/PEDOT:PSS (35 nm)/CBP:16 wt% FIrpic (10 nm)]/BSB:Spiro-2CBP (3 nm)/Spiro-2CBP:4wt % Ir(2-phq)3 (5 nm)/TPBi (32 nm)/LiF (1 nm)/Al (150 nm) [2]
Colour	Orange
EQE @ 100 cd/m2	22.7%
Current Efficiency @ 100 cd/m2	53.8 cd/A
Power Efficiency @ 100 cd/m2	36.0 Im/W

Device structure	ITO (125 nm)/PEDOT:PSS (35 nm)/CBP (10 nm)]/BSB:Spiro-2CBP (3 nm)/Spiro-2CBP:4wt % Ir(2-phq)3 (5 nm)/TPBi (32 nm)/LiF (1 nm)/Al (150 nm) [2]
Colour	Orange
EQE @ 100 cd/m2	17.2%
Current Efficiency @ 100 cd/m2	36.2 cd/A
Power Efficiency @ 100 cd/m2	28.6 Im/W