mCPCN is an asymmetric bipolar and high-triplet-energy (ET = 3.03 eV) phosphorescent host material which could be used for hosting blue, green, red and white light emitting TADF-OLED devices.

The incorporation of the simple and small CN group can greatly improve film morphology and device thermal stabilities. Compared to mCP, CN group attached to the 3-position of the carbazole unit in mCPCN is believed to increases the electron affinity to achieve a rather balanced hole–electron injection and transport properties while not altering electronic transition energies and maintaining a high triplet energy.

mCPCN from Ossila was used in the high-impact paper (IF 29.4), Single-Layer Organic Light-Emitting Diode with Trap-Free Host Beats Power Efficiency and Lifetime of Multilayer Devices,O. Sachnik et al., Adv. Mater., 36 (16), 2311892 (2024); DOI: 10.1002/adma.202311892.

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.

Chemical Structure

Device Structure(s)

Device structure	ITO/TAPC (40 nm)/mCP (10 nm)/mCPCN doped with 8 wt% of FIrpic (20 nm)/DPPS (5 nm)/3TPYMB (45 nm)/LiF (0.5 nm)/Al (150 nm) [1]
Colour	Blue
Max. Current Efficiency	58.7 cd/A
Max. EQE	26.4%
Max. Power Efficiency	57.6 lm W−1

Device structure	ITO/PEDOT:PSS (70 nm)/TAPC (15 nm)/mCP (5 nm)/mCPCN:DMAC­‐TRZ 8 wt.% (20 nm)/DPPS (5 nm)/3TPYMB (45 nm)/LiF (0.5 nm)/Al (150 nm) [2]
Colour	Green
Max. Current Efficiency	66.8 cd/A
Max. EQE	26.5%
Max. Power Efficiency	65.6 lm W−1

Device structure	ITO/MoO3 (1 nm)/TAPC (40 nm)/mCP (10 nm)/mCPCN doped with 8 wt % of FIrpic (20 nm)/3TPYMB (50 nm)/LiF (1 nm)/Al (150 nm) [3]
Colour	Blue
Max. Current Efficiency	73.4 cd/A
Max. EQE	30.6%
Max. Power Efficiency	67.8 lm W−1

Device structure	ITO/MoO3 (1 nm)/TAPC (40 nm)/mCP (10 nm)/mCPCN doped with 8 wt % of MS2 (20 nm)/3TPYMB (50 nm)/LiF (1 nm)/Al (150 nm) [3]
Colour	Blue
Max. Current Efficiency	79.4 cd/A
Max. EQE	30.1%
Max. Power Efficiency	69.3 lm W−1

Device structure	ITO/MoO3 (1 nm)/TAPC/mCP (10 nm)/mCPCN doped with Ir(III) dopants 1m (12 wt.%; 20 nm)/3TPYMB/LiF (0.5 nm)/Al (100 nm) [4]
Colour	Blue
Max. Current Efficiency	69.5 cd/A
Max. EQE	27%
Max. Power Efficiency	68.2 lm W−1

Device structure	ITO/MoO3 (1 nm)/TAPC/mCP (10 nm)/mCPCN doped with Ir(III) dopants 2m (12 wt.%; 20 nm)/3TPYMB/LiF (0.5 nm)/Al (100 nm) [4]
Colour	Bluish-Green
Max. Current Efficiency	100 cd/A
Max. EQE	30%
Max. Power Efficiency	92 lm W−1

Device structure	ITO/MoO3 (1 nm)/TAPC/mCP (10 nm)/mCPCN doped with Ir(III) dopants 3m (12 wt.%; 20 nm)/3TPYMB/LiF (0.5 nm)/Al (100 nm) [4]
Colour	Green
Max. Current Efficiency	110.8 cd/A
Max. EQE	31.4%
Max. Power Efficiency	108.7 lm W−1