UGH3, 1,3-bis(triphenylsilyl)benzene, is an isomer to UGH-2, 1,4-bis(triphenylsilyl)benzene.

UGH3 is an ultrahigh energy gap (4.40 eV) organosilicon compounds and a weak electron-transport-type host for highly efficient blue PHOLEDs. UGH3 has a high triplet energy (ET=3.1 eV) and can also be used as a host material to dilute exciplex, to enhance TADF-OLED optical and electrical device performance. Having a deep HOMO energy level (7.2 eV), UGH3 can also be used as an effective hole blocking layer material.

Both UGH2 and UGH3 have low glass transition temperatures (Tg) below 100 °C. BSB, 4,4'-di(triphenylsilyl)-biphenyl, however, offers better morphology of OLED device films for higher device performance and stability with higher Tg at 100 °C.

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed materials.

Chemical Structure

Device Structure(s)

Device structure	ITO (70 nm)/NPB (40 nm)/mCP (7.5 nm)/UGH3:FIrpic:Bt2Ir(acac) (14%, 0.3%) (30 nm)/UGH3 (5 nm)/Bphen (50 nm)/LiF (1 nm)/Al (120 nm) [2]
Colour	White
Max. Current Efficiency	47.5 cd/A
Max. EQE	18.9 %
Max. Power Efficiency	36.6 Im/W

Device structure	ITO (70 nm)/NPB (40 nm)/mCP (7.5 nm)/UGH3:mCP (7:3):14 wt%FIrpic:0.3 wt% Bt2Ir(acac) (30 nm)/UGH3 (5 nm)/Bphen (50 nm)/LiF (1 nm)/Al (120 nm) [2]
Colour	White
Max. Current Efficiency	47.6 cd/A
Max. EQE	18.9 %
Max. Power Efficiency	40.9 Im/W

Device structure	ITO/NPB (40 nm)/TSBPA (10 nm)|TSBPA:PO-T2T 1:1 in 50 vol % UGH-3 (40 nm)|POT2T (50 nm)|LiF (1 nm)|Al (100 nm) [3]
Colour	Green
Max. EQE	19.2 %