CAS Number 1411910-25-2


PXZ-TRZ has a bipolar structure with phenoxazine (PXZ) as an electron donor unit and 2,4,6-triphenyl-1,3,5-triazine (TRZ) as an electron acceptor unit.
PXZ-TRZ is a green emitter and is mainly used as a dopant or assistant dopant material in highly efficient TADF-OLED devices, but can also be used as a host or co-host material. The orientational packing order of a linear-shaped dopant such as PXZ-TRZ can be selectively controlled in a randomly oriented co-host matrix with mCBP by varying the temperature during deposition of the thin films.
| CAS number | 1411910-25-2 |
|---|---|
| Chemical formula | C33H22N4O |
| Molecular weight | 490.55 g/mol |
| Absorption | λmax 420 nm (in Toluene) |
| Fluorescence | λem 545 nm (in Toluene) |
| HOMO/LUMO | HOMO = 5.5 eV, LUMO = 3.1 eV [1] |
| Full chemical name | 10-(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-10H-phenoxazine |
| Synonyms | Phenoxazine-2,4,6-triphenyl-1,3,5-triazine |
| Classification / Family | Triazine derivatives, TADF green emitters, TADF host materials, Sublimed materials |
| Purity | Sublimed >99.0% (HPLC) |
|---|---|
| Melting point | TGA: >300 °C(0.5% weight loss) |
| Appearance | Yellow powder/crystals |
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed materials.
| Device structure | ITO/TAPC (35 nm)/1 wt%-TBRb:25 wt%-PXZ-TRZ:mCBP (30 nm)/T2T (10 nm)/Alq3 (55 nm)/LiF (0.8 nm)/Al (100 nm) [2] |
|---|---|
| Colour |
Yellow |
| Max. Current Efficiency | 60 cd/A |
| Max. EQE | 18.0% |
| Max. Power Efficiency | 58 Im/W |
| Device structure | ITO/HAT-CN (10 nm)/TAPC (40 nm)/TCTA (10 nm)/ SF4-TPE:40 wt% PXZ-TRZ:1 wt% TBRb (20 nm)/TmPyPB (60 nm)/Liq (2 nm)/Al (100 nm) [3] |
|---|---|
| Colour |
Yellow |
| Max. EQE | 23.0 % |
| Max. Power Efficiency | 60.3 Im/W |
| Device structure | ITO/HAT-CN (10 nm)/TAPC (40 nm)/TCTA (10 nm)/ SF4-TPE:20 wt% PXZ-TRZ:1 wt% TBRb (20 nm)/TmPyPB (60 nm)/Liq (2 nm)/Al (100 nm) [3] |
|---|---|
| Colour |
Yellow |
| Max. EQE | 24.7 % |
| Max. Power Efficiency | 61.6 Im/W |
| Device structure | ITO/HAT-CN (10 nm)/TAPC (40 nm)/TCTA (10 nm)/SF4-TPE: 30% PXZ-TRZ:1 wt% TBRb (17.5 nm)/SF4-TPE: 40 wt% 4P-NPD (2.5 nm)/TmPyPB (45 nm)/Liq (2 nm)/Al (100 nm) [3] |
|---|---|
| Colour |
White |
| Max. EQE | 24.5 % |
| Max. Power Efficiency | 65.4 Im/W |
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