ossila材料Ir(dpm)PQ2

CAS Number 713079-03-9

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产品详情

High-purity (>99.0%) and available online for priority dispatch, Bis(2-phenylquinoline)(2,2,6,6-tetramethylheptane-3,5-dionate)iridium(III), CAS No. 713079-03-9, Sublimed ≥99.0%


Bis(2-phenylquinoline)(2,2,6,6-tetramethylheptane-3,5-dionate)iridium(III) - Ir(dpm)PQ2, also known as Ir(PQ)2(tmd) is an orange to red phosphorescent emitter. The ligand 2,2,6,6-tetramethylheptane-3,5-dionate coordinated to the iridium centre is sterically hindered with two bulky tert-butyl groups at both ends.

Ir(dpm)PQ2 is often either used in pure red as a single emitting layer material or in white emitting highly efficient OLED devices for its low lying triplet energy state and greater stability, preventing triplet-triplet annihilation thus leading to higher device efficiencies.

General Information


CAS number 713079-03-9
Full name Bis(2-phenylquinoline)(2,2,6,6-tetramethylheptane-3,5-dionate)iridium(III)
Chemical formula C41H39N2O2Ir
Molecular weight 783.98 g/mol
Absorption* λmax 333 nm in DCM
Fluorescence λem 595 nm in DCM
HOMO/LUMO HOMO 5.10 eV, LUMO 3.10 eV [1]
Synonyms PQ2Ir(dpm), PQ2Ir, Ir(PQ)2(tmd), Bis[2-(2-quinolinyl)phenyl](2,2,6,6-tetramethyl-3,5-heptanedionato)iridium
Classification / Family Iridium Complex, Organic electronics, TADF-OLEDs, Orange to red phosphorescent dopant materials, Sublimed materials.

* Measurable with an optical spectrometer

Product Details


Purity Sublimed* >99.0% (HPLC)
Melting point TGA >290 °C (0.5% weight loss)
Appearance Red powder/crystals

* Sublimation is a technique used to obtain ultra pure-grade chemicals, see sublimed materials.

Chemical Structure



Irdpmpq2, 713079-03-9
Chemical structure of Bis(2-phenylquinoline)(2,2,6,6-tetramethylheptane-3,5-dionate)iridium(III) - Ir(dpm)PQ2, CAS 713079-03-9

Device Structure(s)


Device structure ITO/HATCN (5 nm)/NPB (40 nm)/TCTA (5 nm)/BBPI (6 nm)/CBP (3 nm)/CBP:8 wt% Ir(PPy)3 (10 nm)/CBP (3 nm)/BBPI:1.0 wt% PQ2Ir (8 nm)/TPBi (40 nm)/LiF (1 nm)/Al [1]
Colour White white light emitting device
Max Current Efficiency 71.4 cd/A
Max EQE 33.5%
Max. Power Efficiency 61.5 lm W-1
Device structure ITO (130 nm)/TAPC (40 nm)/TCTA (5 nm)/PQ2Ir(dpm) 2 wt % doped CBP (1 nm)/Ir(ppy)3 6 wt % doped CBP (1 nm)/Ir(dbfmi)* 10 wt % doped PO9 (10 nm)/B3PyPB (50 nm)/LiF (0.5 nm)/Al (100 nm) [2]
Colour White white light emitting device
Max. Current Efficiency 53.7 cd/A
Max. EQE 23.3%
Max. Power Efficiency 55.2 lm W-1
Device structure ITO/HATCN (10 nm)/NPB (30 nm)/HTM (10 nm)/6 wt% PQ2Ir:BCzPh:SF2-TRZ (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm), [3]
Colour Red red light emitting device
Max. Current Efficiency 33.6 cd/A
Max. EQE 19.8%

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