CAS Number 1174006-43-9


NBPhen is one of the close relatives of BPhen which is used in OLEDs and photovoltaic devices as an electron-injection layer or hole-blocking layer material. Due to its low evaporation temperature and air stability, caesium azide (CsN3) doped NBphen has also been demonstrated as an efficient electron-injection layer (EIL) capable of replacing lithium fluoride (LiF) in such devices.
OLEDs utilising CsN3 -doped NBPhen as EIL exhibit significantly improved current density-luminance-voltage characteristics.
| CAS number | 1174006-43-9 |
|---|---|
| Full name | 2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline |
| Chemical formula | C44H28N2 |
| Molecular weight | 584.71 g/mol |
| Absorption | λmax 395 nm in THF |
| Fluorescence | λem 412 nm in THF |
| HOMO/LUMO | HOMO = 5.8 eV, LUMO = 2.6 eV [1] |
| Synonyms | 2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline |
| Classification / Family | Phenanthroline derivatives, Organic electronics, Electron-injection layer materials (EIL), Hole-blocking layer materials (HBL), TADF materials, Sublimed materials. |
| Purity | Sublimed: >99% (HPLC) |
|---|---|
| Melting point | TGA: >340 °C (0.5% weight loss) |
| Appearance | Off-white powder/crystals |
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed Materials.
| Device structure | ITO (100 nm)/PEDOT:PSS (35 nm)/PLEXCORE UT-314* (20 nm)/PYD2:Cu(I)-iBuPyrPHOS* 1:1 (30 nm)/T2T (20 nm)/NBPhen (30 nm)/LiF (1 nm)/Al [1] |
|---|---|
| Colour |
Yellow |
| Max. EQE | 11.9% |
| Max. Current Efficiency | 36.0 cd/A |
| Device structure | ITO/HATCN (10 nm)/NPB (30 nm)/TCTA (10 nm)/6 wt% PQ2Ir:TCTA:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2] |
|---|---|
| Colour |
Orange |
| Max. EQE | 19.6% |
| Max. Current Efficiency | 35.5 cd/A |
| Device structure | ITO/HATCN (10 nm)/NPB (30 nm)/BCzPh (10 nm)/6 wt% PQ2Ir:BCzPh:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2] |
|---|---|
| Colour |
Red |
| Max. EQE | 20.6% |
| Max. Current Efficiency | 36.0 cd/A |
| Device structure | ITO/MO3 (5 nm)/NPB (75 nm)/C545T:Alq3 (30 nm)/NBPhen (25 nm)/CsN3:NBPhen (5 nm)/Al [3] |
|---|---|
| Colour |
Green |
| Max. Luminance | 60,000 cd/m2 |
| Max. Current Efficiency | 10.4 cd/A |
| Device structure | ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-p-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4] |
|---|---|
| Colour |
Yellow |
| Max. Power Efficiency | 115.2 lm W-1 |
| Max. EQE | 25.5% |
| Max. Current Efficiency | 80.6 cd/A |
| Device structure | ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-m-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4] |
|---|---|
| Colour |
Yellow |
| Max. Power Efficiency | 102.6 lm W-1 |
| Max. EQE | 25.2% |
| Max. Current Efficiency | 79.8 cd/A |
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