NBPhen is one of the close relatives of BPhen which is used in OLEDs and photovoltaic devices as an electron-injection layer or hole-blocking layer material. Due to its low evaporation temperature and air stability, caesium azide (CsN3) doped NBphen has also been demonstrated as an efficient electron-injection layer (EIL) capable of replacing lithium fluoride (LiF) in such devices.
OLEDs utilising CsN3 -doped NBPhen as EIL exhibit significantly improved current density-luminance-voltage characteristics.
General Information
CAS number
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1174006-43-9
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Full name
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2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline
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Chemical formula
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C44H28N2
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Molecular weight
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584.71 g/mol
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Absorption
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λmax 395 nm in THF
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Fluorescence
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λem 412 nm in THF
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HOMO/LUMO
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HOMO = 5.8 eV, LUMO = 2.6 eV [1]
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Synonyms
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2,9-Bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
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Classification / Family
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Phenanthroline derivatives, Organic electronics, Electron-injection layer materials (EIL), Hole-blocking layer materials (HBL), TADF materials, Sublimed materials.
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Product Details
Purity
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Sublimed: >99% (HPLC)
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Melting point
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TGA: >340 °C (0.5% weight loss)
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Appearance
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Off-white powder/crystals
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*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the sublimed Materials.
Chemical Strucutre
Chemical structure of
2,9-Dinaphthalen-2-yl-4,7-diphenyl-1,10-phenanthroline (NBPhen), CAS
1174006-43-9
Device Structure(s)
Device structure
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ITO (100 nm)/PEDOT:PSS (35 nm)/PLEXCORE UT-314* (20 nm)/PYD2:Cu(I)-iBuPyrPHOS* 1:1 (30 nm)/T2T (20 nm)/NBPhen (30 nm)/LiF (1 nm)/Al [1]
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Colour
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Yellow
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Max. EQE
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11.9%
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Max. Current Efficiency
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36.0 cd/A
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Device structure
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ITO/HATCN (10 nm)/NPB (30 nm)/TCTA (10 nm)/6 wt% PQ2Ir:TCTA:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
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Colour
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Orange
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Max. EQE
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19.6%
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Max. Current Efficiency
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35.5 cd/A
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Device structure
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ITO/HATCN (10 nm)/NPB (30 nm)/BCzPh (10 nm)/6 wt% PQ2Ir:BCzPh:T2T (4:6) (25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [2]
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Colour
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Red
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Max. EQE
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20.6%
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Max. Current Efficiency
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36.0 cd/A
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Device structure
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ITO/MO3 (5 nm)/NPB (75 nm)/C545T:Alq3 (30 nm)/NBPhen (25 nm)/CsN3:NBPhen (5 nm)/Al [3]
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Colour
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Green
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Max. Luminance
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60,000 cd/m2
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Max. Current Efficiency
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10.4 cd/A
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Device structure
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ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-p-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4]
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Colour
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Yellow
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Max. Power Efficiency
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115.2 lm W-1
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Max. EQE
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25.5%
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Max. Current Efficiency
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80.6 cd/A
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Device structure
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ITO/HATCN (5 nm)/TAPC (30 nm)/TCTA (10 nm)/TRZ-m-ACRSA*:PO-01 (6 wt%, 25 nm)/T2T (10 nm)/NBPhen (40 nm)/LiF (1 nm)/Al (100 nm) [4]
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Colour
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Yellow
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Max. Power Efficiency
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102.6 lm W-1
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Max. EQE
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25.2%
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Max. Current Efficiency
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79.8 cd/A
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