ossila材料BP4mPy

CAS Number 1009033-94-6

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产品详情

BP4mPy, one of the most popular ETL and HBL material used in OLEDs

Paired with electron-donating materials to host red, green, and blue PhOLEDs, 3,3',5,5'-Tetra[(m-pyridyl)-phen-3-yl]biphenyl, CAS No. 1009033-94-6, Sublimed ≥99.0%


BP4mPy, namely 3,3',5,5'-Tetra[(m-pyridyl)-phen-3-yl]biphenyl, is one of the most popular electron-transporting and hole-blocking layer materials used in OLEDs. It is electron deficient due to the electron-withdrawing nature of its four pyridine pendants. Together with electron-donating materials (e.g. TCTA), BP4mPy can also be used as an exciplex host for red, green, and blue phosphorescent OLEDs. BP4mPy aids effective energy transfer from exciplexes to emitters, thus leading to high efficiencies.

General Information


CAS number 1009033-94-6
Full name 3,3',5,5'-Tetra[(m-pyridyl)-phen-3-yl]biphenyl, 3,5,3',5'-Tetra(3-pyrid-3-ylphenyl)-1,1'-biphenyl.
Chemical formula C56H38N4
Molecular weight 766.93 g/mol
Absorption λmax 252 nm in THF
Fluorescence λmax 352 nm in THF
HOMO/LUMO HOMO = 6.66 eV, LUMO = 2.57 eV [1]
Classification / Family Electron-transport layer (ETL) materials, Hole-blocking layer (HBL) materials, TADF materials.

Product Details


Purity Sublimed > 99% (HPLC)
Melting point Tg = 105 °C
Appearance Off-white crystals/powder

Chemical Structure


BP4mPy chemical structureChemical Structure of BP4mPy; CAS No. 1009033-94-6

Device Structure(s)


Device structure ITO (90 nm)/TAPC (65 nm)/TCTA (5 nm)/26DCzPPy:4 wt% B-2PXZ (30 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [2]
Colour Yellow yellow light emitting device
Max. Power Efficiency 20.3 lm W1
Max. Current Efficiency 32.2 cd/A
Max. EQE 10.1%
Device structure ITO (110 nm)/TAPC (30 nm)/mCP:1.0 wt% Os(bpftz)2(PPhMe2)2* (1 nm)/mCP:8.0 wt% Ir(bptz)2(bdp)* (18 nm)/mCP:7.0 wt% Os(bpftz)2(PPhMe2)2* (1 nm)/BP4mPy (50 nm)/LiF (0.8 nm)/Al (150 nm) [3]
Colour White white light emitting device
Max. Power Efficiency 10.39 lm W1
Max. Current Efficiency 13.25 cd/A
Max. EQE 6.16%
Device structure ITO/TAPC (40 nm)/mCP:Complex 2* 1 wt% (30 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [4]
Colour Green green light emitting device
Max. Power Efficiency 22.6 lm W1
Max. Current Efficiency 30.3 cd/A
Max. EQE 10.0%
Device structure ITO (90 nm)/TAPC:20 wt % of MoO3 (20 nm)/TAPC (30 nm)/26DCzPPy and x wt % PXZBM* (30 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [5]
Colour Green green light emitting device
Max. Power Efficiency 50.0 lm W1
Max. Current Efficiency 67.7 cd/A
Max. EQE 22.6%
Device structure ITO (110 nm)/TAPC (30 nm)/mCP and 8.0 wt% [Os(pz2py)(PPh2Me)2(CO)]* (30 nm)/BP4mPy (50 nm)/LiF (0.8 nm)/Al (150 nm) [6]
Colour Yellow yellow light emitting device
Max. Power Efficiency 53.8 lm W1
Max. Current Efficiency 61.0 cd/A
Max. EQE 13.8%
Device structure ITO/TAPC (40 nm)/TCTA 46 wt %:BP4mPy 46 wt %:fac-Ir(ppy)3 8 wt % (30 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [7]
Colour Green green light emitting device
Max. Power Efficiency 42.6 lm W1
Max. Current Efficiency 48.7 cd/A
Max. EQE 14.1%
Device structure ITO/TAPC (40 nm)/TCTA 46 wt %:BP4mPy 46 wt %:FIrpic 8 wt % (30 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [7]
Colour Blue blue light emitting device
Max. Power Efficiency 37.9 lm W1
Max. Current Efficiency 35.6 cd/A
Max. EQE 15.8%

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