ossila材料Ir(MDQ)2(acac)

CAS Number 536755-34-7

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Ir(MDQ)2(acac).jpg

Ir(MDQ)2(acac).jpg

产品详情

Ir(MDQ)2(acac) has a 2-methyldibenzo[f,h]quinoxaline ligand that coordinates with the iridium metal center via the formation of Ir-N and Ir-C bonds.

Ir(MDQ)2(acac) is another family member of iridium complexes, which are the most effective phosphorescent emitters employed in OLEDs. Devices based on Ir(MDQ)2(acac) emit orange-red light, with a maximum emission of 600-614 nm. OLEDs with Ir(MDQ)2(acac) as an emitting layer material give great brightness and exceedingly-high external quantum, current, and power efficiencies.

General Information


CAS number 536755-34-7
Full name Bis(2-methyldibenzo[f,h]quinoxaline)(acetylacetonate) iridium(III)
Chemical formula C39H29N4O2Ir
Molecular weight 777.89 g/mol
Absorption λmax 370 nm in DCM
Fluorescence λmax 608 nm in THF
HOMO/LUMO HOMO = 5.4 eV, LUMO = 2.8 eV [1]
Classification / Family Iridium complexes, Phosphorescent red-orange emitter, Sublimed materials, Organic electronics.

Product Details


Purity 99%
Melting point n/a
Appearance Red crystals/powder

Chemical Structure


irmdq2acac, 536755-34-7
Chemical structure of Bis(2-methyldibenzo[f,h]quinoxaline)(acetylacetonate) iridium(III), Ir(MDQ)2(acac), CAS 536755-34-7

Device Structure(s)


Device structure ITO/MoO3 (3 nm)/TAPC (40 nm)/Ir(MDQ)2(acac) (2 wt%):26DCzPPy (10 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) [1]
Colour Red red light emitting device
Max. Power Efficiency 24.39 lm W−1
Max. Current Efficiency 35.2 cd/A
Max. EQE 12.3%
Device structure ITO/MoO3 (3 nm)/TAPC (40 nm)/Ir(MDQ)2(acac) (2 wt%):TcTa (10 nm)/Ir(MDQ)2(acac) (2 wt%):26DCzPPy (10 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) [1]
Colour Red red light emitting device
Max. Power Efficiency 40.19 lm W−1
Max. Current Efficiency 44.76 cd/A
Max. EQE 15.5%
Device structure ITO/HAT-CN (10 nm)/TAPC (45 nm)/TCTA (10 nm)/Ir(MDQ)2(acac) (0.02 nm)/Ir(ppy)2(acac) (0.02 nm)/FIrpic (0.3 nm)/TmPyPb (40 nm)/ Liq (2 nm)/Al (120 nm) [2]
Colour White white light emitting device
Max. Power Efficiency 46.1 lm W−1
Max. Current Efficiency 45.5 cd/A
Max. EQE 17.6%
Device structure ITO/HAT-CN (10 nm)/TAPC (45 nm)/TCTA (7 nm)/Ir(ppy)2(acac) (0.02 nm)/FIrpic (0.3 nm)/TCTA (3 nm)/ Ir(MDQ)2(acac) (0.02 nm)/TmPyPb (3 nm)/Ir(ppy)2(acac) (0.02 nm)/FIrpic (0.3 nm)/TmPyPb (37 nm)/Liq (2 nm)/Al (120 nm) [2]
Colour White white light emitting device
Max. Power Efficiency 43.1 lm W−1
Max. Current Efficiency 44.0 cd/A
Max. EQE 17.2%
Device structure NPB (50 nm)/Ir(MDQ)2(acac):CBP(5.7%, 30 nm)/T PBI (15 nm)/Alq (35 nm) [3]
Colour Red red light emitting device
Max. Power Efficiency 13.7 lm W−1
Max. Current Efficiency 26.2 cd/A
Max. EQE 12.4
Device structure ITO/HAT-CN (10 nm)/SAFDPA (45 nm)/ SAFDPA:Bphen (1:1, w/w):Ir(MDQ)2(acac) (2 wt %, 20 nm)/Bphen (45 nm)/Liq (2 nm)/Al (120 nm) [4]
Colour Reddish-Orange orange light emitting device
Max. Power Efficiency 31.8 lm W−1
Max. Current Efficiency 32.0 cd/A
Max. EQE 10.7%

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