CAS Number 682806-51-5
A family member of tetracene, 2,8-Di-tert-butyl-5,11-bis(4-tert-butylphenyl)-6,12-diphenyltetracene (TBRb) has been widely used as a yellow dopant material in TADF-OLEDs. It is popular because of its bipolar characteristics.
The greater hindrance introduced by four tetra-tert-butyl bulky steric groups (attached to the benzene rings of rubrene) is believed to reduce the chances of concentration-quenching by effectively preventing inter-molecular aggregation of the dopant molecules. In return, this can improve device performance (e.g. in terms of external quantum efficiencies, overall power efficiencies, and lifetime).
CAS number | 682806-51-5 |
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Full name | 2,8-Di-tert-butyl-5,11-bis(4-tert-butylphenyl)-6,12-diphenyltetracene |
Chemical formula | C58H60 |
Molecular weight | 757.1 g/mol |
Absorption | λmax 306 nm in DCM |
Fluorescence | λem 571 nm in DCM |
HOMO/LUMO | HOMO 5.38 eV, LUMO 3.20 eV [1] |
Synonyms | Tetra(t-butyl)rubrene, 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene |
Classification / Family | Tetracene derivatives, Organic electronics, TADF-OLEDs, TADF yellow dopant materials, Sublimed materials. |
Purity | Sublimed >99.0% (HPLC) |
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Melting point | TGA: >310 °C (0.5% weight loss) |
Appearance | Orange powder/crystals |
*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.
Device structure | ITO (120 nm)/PEDOT:PSS (60 nm)/TAPC (10 nm)/TCTA (10 nm)/mCP (10 nm)/DPEPO:DMAC-DPS:TBRb (25 nm)/TSPO1 (5 nm)/TPBI (30 nm)/LiF (1 nm)/Al (200 nm) [2] |
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Colour |
White ![]() |
Max Current Efficiency | 39.3 cd/A |
Max EQE | 17.6% |
Max. Power Efficiency | 41.0 lm W-1 |
Device structure | ITO/TAPC (75 nm)/TCTA (10 nm)/ Ir(ppy)2tmd+TBRb (30 nm)/B4PYMPM (50 nm)/LiF (0.7 nm)/Al (100 nm) [3] |
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Colour |
Yellow ![]() |
Max EQE | 26.1% |
Max. Power Efficiency | 114.3 lm W-1 |
Device structure | ITO (120 nm)/PEDOT:PSS (60 nm)/mCP (30 nm)/ CzAcSF:TBPe:TBRb (25 nm)/TSPO1 (5 nm)/TPBI (30 nm)/LiF (1 nm)/Al (200 nm) [4] |
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Colour |
White ![]() |
Max Current Efficiency | 35.1 cd/A |
Max EQE | 14.0% |
Max. Power Efficiency | 36.2 lm W-1 |
Device structure | ITO (95 nm)/HATCN (10 nm)/ TAPC (45 nm)/TCTA (5 nm)/0.4 wt% TBRb: 6 wt% 4CzPN (8 nm)/0.8 wt% TBRb: 10 wt% 4CzPN: mCBP (4 nm)/40 wt% Bepp2: mCBP (5 nm)/Bepp2 (3 nm)/5 wt% DSA-Ph*: MADN (8 nm)/TmPyPB (50 nm)/LiF (1 nm)/Al (100 nm) [5] |
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Colour |
White ![]() |
Max Current Efficiency | 48.9 cd/A |
Max EQE | 15.1% |
Max. Power Efficiency | 47.4 lm W-1 |
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