UGH2, ETL and HBL material for organic electronic devices

TADF host material for blue-emitting dopants in highly-efficient blue PhOLEDs, CAS No. 40491-34-7 / 18856-08-1, Sublimed ≥99.0%

1,4-Bis(triphenylsilyl)benzene, known as UGH-2, is one of the well-known TADF host materials for blue-emitting dopants (such as FIrPic) in highly-efficient blue PhOLEDs. This is due to its wide energy gap (4.4 eV) and high triplet energy (ET = 3.5 eV).

With a very deep HOMO energy level (HOMO = 7.2 eV), UGH-2 also works as an electron-transport (ETL) and hole-blocking layer (HBL) material.

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals, see the sublimed materials.

Chemical Structure

Device Structure(s)

Device structure	ITO/MoOx (5 nm)/NPB (40 nm)/TCTA (5 nm)/3% Y-Pt :mCP(20 nm)/8% FIrpic:UGH2 (20 nm)/TAZ (40 nm)/LiF (0.5 nm)/Al (100 nm) [1]
Colour	White
Max. Current Efficiency	29.8 cd/A
Max. EQE	10.3%
Max. Power Efficiency	19.7 lm W-1

Device structure	ITO/MoOx (5 nm)/NPB (40 nm)/mCP(10 nm)/2% Y-Pt:8% FIrpic:UGH2 (20 nm)/TAZ (40 nm)/LiF (0.5 nm)/Al (100 nm) [1]
Colour	White
Max. Current Efficiency	28.5 cd/A
Max. EQE	9.1%
Max. Power Efficiency	21.3 lm W-1

Device structure	ITO/MoO x (5 nm)/NPB (40 nm)/4% Y-Pt :TCTA (20 nm)/8%FIrpic:mCP(10 nm)/8% FIrpic:UGH2 (10 nm)/BAlq (40 nm)/LiF (0.5 nm)/Al (100 nm) [1]
Colour	White
Max. Current Efficiency	45.6 cd/A
Max. EQE	16.0%
Max. Power Efficiency	35.8 lm W-1

Device structure	ITO/TAPC (30 nm)/TCTA (10 nm)/CzSi (3 nm)/CzSi doped with 4 wt% of 2c* (25 nm)/UGH2 doped with 4 wt% of 2c*(3 nm)/UGH2 (2 nm)/TmPyPB (50 nm)/LiF (0.8 nm)/Al (150 nm) [2]
Colour	Blue
Max. Current Efficiency	22.3 cd/A
Max. EQE	11%
Max. Power Efficiency	16.7 Im/W

Device structure	(ITO)/a-NPD (30 nm)/TCTA (20 nm)/CzSi (3 nm)/CzSi doped with 6 wt% [Ir(fppz)2(dfbdp)] (35 nm)/UGH2 doped with 6 wt% [Ir(fppz)2(dfbdp)] (3 nm)/UGH2 (2 nm)/BCP (50 nm)/Cs2CO3 (2 nm)/Ag (150 nm) [3]
Colour	Blue
Max. Current Efficiency	11.4 cd/A
Max. EQE	11.9%
Max. Power Efficiency	7.9 Im/W

Device structure	ITO/2-TNATA (30 nm)/TAPC (30 nm)/TCTA (10 nm)/mCP:8 wt.% (F2CF3Ch2ppy)2Ir(pic-N-oxide)* (20 nm)/UGH2:15 wt.% (F2CF3Ch2ppy)2Ir(pic-N-oxide) (10 nm)/BAlq (40 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour	Blue
Max. Current Efficiency	36.1 cd/A
Max. EQE	23.3%
Max. Power Efficiency	17.3 Im/W

Device structure	ITO/TAPC (40 nm)/mCP (10 nm)/UGH2:10 wt.% FIrpic (20 nm)/ 3TPYMB (40 nm)/LiF (1 nm)/Al (100 nm) [5]
Colour	Blue
Max. Current Efficiency	49 cd/A
Max. EQE	23%
Max. Power Efficiency	31.6 Im/W