TSPO1, diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, has a structure of triphenylsilane connecting triphenyl phosphine oxide. Comparing with UGH-2, TSPO1 has large permanent dipole moment due to the polar phosphine oxide group and its asymmetric structure.

With a sufficiently high triplet energy (ET ) of 3.36 eV, TSPO1 can be used as fluorescent host or exciton blocking layer materials in TADF-OLED devices. Also with low lying LUMO (ELUMO = 2.52 eV) and HOMO (EHOMO = 6.79 eV), TSPO1 is suitable for efficient electron injection and hole blocking, owing to the electron deficient nature of diphenylphosphine oxide moiety it bears.

General Information

Product Details

Chemical Structure

Device Structure(s)

Device structure	ITO/HATCN (7nm)/TAPC (40 nm)/DCDPA (10 nm)/CzCbPy: 20 wt% DMAC-DPS (25 nm)/TSPO1 (5 nm)/TPBi (30 nm)/LiF (1.5 nm)/Al (100 nm) [2]
Colour	Deep Blue
Max. Luminance	8,035 cd/m2
Max. Current Efficiency	35.0 cd/A
Max. EQE	22.9%

Device structure	ITO/HATCN (5 nm)/NPB (60 nm)/MCP (5 nm)/15 wt% PXZ-CMO:mCP (30 nm)/TSPO1 (5 nm)/TPBi (30 nm)/LiF (0.5 nm)/Al (150 nm) [3]
Colour	Green
Max. Luminance	8,124 cd/m2
Max. Current Efficiency	38.2 cd/A
Max. EQE	12.1%

Device structure	PEDOT:PSS (60 nm)/TAPC (20 nm)/mCP (10 nm)/DPEPO: TmCzTrz (25 nm)/TSPO1 (5 nm)/TPBI (20 nm)/LiF (1 nm)/Al (200 nm) [4]
Colour	Blue
Max. Power Efficiency	52.1 Im/W
Max. EQE	25.5%

Device structure	ITO (50 nm)/PEDOT:PSS (60 nm)/poly(9-vinylcarbazole) (15 nm)/SiCz:4CzIPN (30 nm)/TSPO1 (35 nm)/LiF (1 nm)/Al (200 nm) [5]
Colour	Green
Max. Power Efficiency	63.4 Im/W
Max. EQE	26%

Device structure	ITO/MoO3 (2 nm)/TAPC (40 nm)/TCTA (10 nm)/CzSi (3 nm)/CzSi:Pd-B-1* (10%):TTPA (1%) (20 nm)/TSPO1 (10 nm)/TmPyPb (40 nm)/LiF (1.2 nm)/Al (150 nm) [6]
Colour	Green
Max Current Efficiency	38.85 cd/A
Max EQE	10.41%
Max. Power Efficiency	38.14 lm W-1

Device structure	ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP) (15 nm)/1 wt% DABNA-2*:mCBP(20 nm)/TSPO1 (40 nm)/LiF (1 nm)/Al (100 nm) [7]
Colour	Blue
Max. Current Efficiency	21.1 cd/A
Max. EQE	20.2%
Max. Power Efficiency	15.1 lm W−1

Device structure	ITO (50 nm)/NPD (40 nm)/TCTA (15 nm)/mCP) (15 nm)/1 wt% DABNA-2*:mCBP(20 nm)/TSPO1 (40 nm)/LiF (1 nm)/Al (100 nm) [8]
Colour	Yellow
Max. Current Efficiency	66.2 cd/A
Max. EQE	23.2%
Max. Power Efficiency	56.2 lm W−1

Device structure	ITO (120 nm)/PEDOT:PSS (60 nm)/TAPC (10 nm)/TCTA (10 nm)/mCP (10 nm)/DPEPO:DMAC-DPS:TBRb (25 nm)/TSPO1 (5 nm)/TPBI (30 nm)/LiF (1 nm)/Al (200 nm) [9]
Colour	White
Max Current Efficiency	39.3 cd/A
Max EQE	17.6%
Max. Power Efficiency	41.0 lm W-1