ossila材料CBP

CAS Number 58328-31-7

  • 大客户经理

  • 销售经理

咨询热线:0755-23003036

产品咨询
CBP.jpg

CBP.jpg

产品详情

CBP, 4,4′-Bis(N-carbazolyl)-1,1′-biphenyl, is one of the most widely-used host materials for efficient fluorescent and phosphorescent organic light-emitting diodes with high hole mobility. This is due to its electron-rich property from two carbazolyl units.

It has been demonstrated that CBP can efficiently host green, yellow and red phosphorescent emitters with triplet energies smaller than that of CBP (ET = 2.6 eV) [1].

General Information


CAS number 58328-31-7
Chemical formula C36H24N2
Molecular weight 484.59 g/mol
HOMO/LUMO HOMO 6.0 eV, LUMO 2.9 eV
Synonyms CBP, 4,4′-Bis(9-carbazolyl)-1,1′-biphenyl, 4,4-N,N′-Dicarbazole-1,1′-biphenyl,DCBP, BSBCz, BSB-Cz
Classification / Family

Carbazole derivatives, Hole-injection layer materials, Hole transport layer materials, Hole blocking layer materials, Phosphorescent host materials, Light-emitting fiodes, Organic electronics, Sublimed materials

Product Details


Purity

> 99.5% (sublimed)

Melting point 281-285 (lit.) °C
Appearance White powder

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials page.

Chemical Structure


Chemical structure of CBPChemical structure of CBP, CAS 58328-31-7

Device Structure(s)


Device structure ITO/MoO3 (3 nm)/CBP: 20 wt% Ir(ppy)3: 4 wt% FIrpic (30 nm)/TAZ (50 nm) [8]
Colour Green green light emitting device
Max. Luminance 27,524 cd/m2
Max. Current Efficiency 71.2 cd/A
Device structure ITO /TAPC/(1wt% DPB:99wt% tri-PXZ-TRZ*):CBP (15:85)/LiF/Al [6]
Colour Red red light emitting device
Max EQE 17.5%
Max. Power Efficiency 28 lm W1
Device structure ITO/MO3 (1 nm)/CBP (35 nm)/8 wt% Ir(ppy)2(acac):CBP/TPBi (65 nm)/LiF/Al (100 nm) [7]
Colour Green green light emitting device
EQE at 100 cd/m2 23.4
Current Efficiency at 100

cd/m2

81 cd/A
Power Efficiency at 100

cd/m2

78.0 lm W1
Device structure ITO/MoOx (2 nm)/m-MTDATA: MoOx (30 nm, 15 wt.%)/m-MTDATA (10 nm)/Ir(ppz)3(10 nm)/CBP:PO-01* (3 nm, 6 wt.%)/Ir(ppz)3 (1 nm)/DBFDPOPhCz*:FIrpic (10 nm,10 wt.%)/Bphen (36 nm)/LiF (1 nm)/Al [9]
Colour White white light emitting device
Max. EQE 12.2%
Max. Current Efficiency 42.4 cd/A
Max. Power Efficiency 47.6 lm W1
Device structure ITO/NPB (30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen(35 nm)/LiF (1 nm)/CoPc:C60 (4:1) (5 nm)/MoO3(5 nm)/NPB(30 nm)/CBP:8 wt% (t-bt)2Ir(acac)* (15 nm)/BPhen (35 nm)/Mg:Ag (100 nm) [10]
Colour Yellow yellow light emitting device
Max. EQE 16.78%
Max. Luminance 42,236 cd/m2
Max. Current Efficiency 50.2 cd/A
Max. Power Efficiency 12.9 lm W1
Device structure ITO/NPD* (40 nm)/9%-Ir(piq)3:CBP (20 nm)/BPhen (50 nm)/KF (1 nm)/Al [11]
Colour Red red light emitting device
Max. Luminance 11,000 cd/m2
Max EQE 10.3%
Max. Power Efficiency 8.0 lm W1
Device structure ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)3 doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [12]
Colour Green green light emitting device
Luminance at 15 V 1,320 cd/m2
Power Efficiency at 14 V 56.6 lm W−1
Current Efficiency at 14 V 23.17 cd/A
Device structure ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [13]
Colour Red red light emitting device
Luminance at 10 mA/cm2 1,790 cd/m2
Power Efficiency at 10 mA/cm2 4.65 lm W−1
Current Efficiency at 10 mA/cm2 18.0 cd/A

在线留言

专业代理国外知名镊子品牌

想了解我们的产品价值,请随时和我们联系 +

我们将竭诚为你服务

全国服务热线

0755-23003036

姓名*

联系电话*

电子邮箱*

咨询产品*