Ossila have produced a range of masks for vacuum deposition of materials onto our standardised 8-pixel substrate design. These include masks that are used to deposit electrodes and busbars and masks to deposit semiconducting materials to define an active area for thin film electronic devices - all to obtain the highest device performances possible. All our deposition masks are made from stainless steel, with the option of an additional spacer layer.

We provide the following masks that are suitable for use with our S211 substrate design:

• Busbar mask - Allows for the deposition of high conductivity metals on non-critical parts of the ITO to reduce resistive losses within devices
• Active material masks - Defines an area for the deposition of the materials you wish to study
• Multi electrode masks - Defines a pattern for the deposition of 8 electrodes producing 8 complete devices upon a single substrate, each device has an active area of 4mm2
• Single electrode masks - Defines a single large electrode across the center of the substrate producing a device with an active area of 48mm2
• Multi electrode/busbar masks - A combination of the multi electrode and the busbar mask, allowing for the deposition of 8 individual electrodes and the coating of non-critical parts of the ITO.

Spacer Layers

Each mask has the option of the addition of a 100 µm spacer layer that can be placed between the mask and the substrate. This spacer layer reduces the direct contact between the surface of the substrate and the mask by over 98%. This is recommended for samples that are easily scratched or for porous samples that experience a large amount of out-gassing. For sputtering or other non-directional deposition techniques, the spacer layer is not recommended as the presence of a spacer layer will reduce the precision of your deposited edge.

Deposition Mask Specifications and Designs

General Specifications