Ultra-Flat SiNx Coated Substrates

The Ultra-Flat SiNx Substrates consist of ultra-flat silicon wafers coated with 200nm of amorphous nonstoichiometric ultra low-stress silicon nitride, similar to our silicon nitride grids. The ultra-flat SiNx substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm and 10 x 10mm chips. The 6" wafer is shipped in a 6" Wafer Carrier; the diced pieces are shipped in a Gel-Pak^® Box.

The wafers are stealth diced, a special clean dicing process which produces debris-free substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiNx substrates:

• Material: CZ Virgin Silicon
• Wafer Grade: Prime
• Diameter: 150mm
• Orientation: <100>
• Type/Dopant: P/Boron
• Resistivity: 10-20 Ohm-cm
• Thickness: 675 +/- 25µm
• TTV: ≤2µm
• Site Flatness: ≤1µm
• Warp: ≤30µm
• Bow: ≤20µm
• Front Surface: Polished
• Back Surface: Etched
• Flat: 1 per SEMI Standard
• 2000A +/- 100A SiNx