Germanium disulfide (GeS2), CAS number 12025-34-2, belongs to the group IV layered transition metal dichalcogenides (TMDCs). A promising anisotropic semiconductor with unique vdW structure, germanium disulfide is currently of particular research interest into its potential in energy storage applications such as solid state batteries.

Unlike SnS2 or SnSe2 which has a simple 1T structure with the central Sn atoms are octahedrally coordinated by six outer S/Se atoms, GeS2 has more complex structure. GeS2 has a layered structure with tetrahedral coordination with complex structural patterns, containing 48 atoms in the bulk unit cell (space group P21/c). In these structures, each layer is composed of eight distorted, edge- and corner-sharing tetrahedral [GeS4 ] motifs in one unit cell.

Nanoflakes of 2D GeS2 with a thickness of 4.2 nm achieved via mechanical exfoliation is expected to show strong in-plane anisotropy in electrical, optical, and mechanical properties and has been used as polarization-sensitive photo-detectors in the short wave region.

We supply low price germanium disulfide in several different forms for a range of applications.

Germanium Disulfide Powder

Can be used for preparation of germanium disulfide nanoplates and ultrathin films

Sold by weight

≥99.995% purity

Germanium Disulfide by Size

Can be used to produce single or few-layer germanium disulfide sheets via mechanical or liquid exfoliation

Small (≥10 mm2) or medium (≥25 mm2) crystals available*

≥99.999% purity

*Typical representative size, areas/dimensions may vary

Bulk single germanium disulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation.

Germanium disulfide powder can also be used to prepare GeS2 nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication).

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