F4TCNQ, CAS number 29261-33-4, is one of the most widely used and most effective p-type dopants due to its strong electron-accepting ability and the extended π system. It has a deep LUMO level (-5.2 eV) which is energetically in the vicinity of the HOMO level of many organic semiconductors. Doping is facilitated by charge transfer from the HOMO level of the host to the LUMO of the dopant molecule. Pin devices with F4TCNQ doped 4,4',4''-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) serving as the p-doped HTL show high luminance and efficiency at extremely low operating voltages: For instance, a luminance of 1000 cd/m2 is reached at a voltage of 2.9 V [1].

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials.

Chemical Structure

Device structure	ITO/m-MTDATA*:F4-TCNQ (100 nm)/TPD (5 nm)/Alq3 (20 nm) /BPhen (10 nm)/ Bphen:Li (30 nm)/LiF (1 nm)/Al (100 nm) [1]
Colour	Green
Luminance	1,000 cd/m2 at 2.9 V (high brightness at low operating voltage)
Max. Current Efficiency	5.27 cd/A

Device structure	ITO/MeO-TPD*:F4-TCNQ (100 nm)/Spiro-TAD (10 nm)/TCTA:Ir(ppy)3 (5 nm)/BPhen (10 nm)/Cs-doped BPhen (50 nm)/Al [5]
Colour	Green
Max. EQE	13.7%
Max. Power Efficiency	52 lm W−1

Device structure	ITO/0.4 wt% F4TCNQ doped α NPD (30 nm)/ 5 wt% Ir(ppy)3 doped CBP (50 nm)/BPhen (30 nm)/20 wt% TCNQ mixed BPhen (1.5 nm)/Al [6]
Colour	Green
Luminance@15 V	1,320 cd/m2
Power Efficiency@14 V	56.6 lm W−1
Current Efficiency@14 V	23.17 cd/A

Device structure	ITO/F4TCNQ (3 nm)/MeO-Spiro-TPD (27 nm)/CBP + BCzVbi* (50 nm)/BPhen (10 nm)/TCNQ mixed BPhen (1.5 nm)/Al [7]
Colour	Red
Luminance@ 10 mA/cm2	1,790 cd/m2
Power Efficiency@ 10 mA/cm2	4.65 lm W−1
Current Efficiency@ 10 mA/cm2	18.0 cd/A

Device structure	ITO/MeO-TPD: F4-TCNQ (100 nm, 4%)/NPB (15 nm)/CBP: (MPPZ)2Ir(acac) (25 nm, 8.5%)/CBP (4 nm)/CBP: DSA-ph (20 nm, 3%)/ETLs (30 nm)/LiF (1 nm)/Al (200 nm) [8]
Colour	White
Max. Luminance	97,067 cd/m2
Max. Current Efficiency	42.8 cd/A
Max. Power Efficiency	21.1 lm W−1

Device structure	ITO (120 nm)/0.4 wt. % F4-TCNQ:α-NPD (35 nm)/5 wt. % BCzVBi:CBP (20 nm)/ 5 wt. % Ir(ppy)3:CBP (4 nm)/0.75 wt. % Ir(btp)2acac:CBP (12.5 nm)/BAlq (30 nm)/LiF (1 nm)/Al (150 nm) [9]
Colour	White
Max. Luminance	106,100 cd/m2
Max. Current Efficiency	50.3 cd/A
Max. Power Efficiency	26.3 lm W−1

*For chemical structure information, please refer to the cited references.

Characterisation