ossila材料TAPC

Charge Transport Layer Materials, High Purity Sublimed Materials, Hole Injection Layer Materials

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产品详情

1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane, known as TAPC, has been widely used as a hole transport material in organic light-emitting diodes (OLEDs) due to its high hole mobility.

Having a higher E(2.87 eV) than the typical blue phosphorescent guest material, TAPC can be used as both hole-transport layer material and as host for blue phosphorescent (such as FIrpic) guest molecules, resulting in a reduction of the number of organic layers and simplified OLED structures.

General Information


CAS number 58473-78-2
Chemical formula C46H46N2
Molecular weight 626.87 g/mol
Absorption λmax 305 nm (in THF)
Fluorescence λem 414 nm (in THF)
HOMO/LUMO HOMO = 5.5 eV, LUMO = 2.0 eV
Synonyms
  • 4,4′-Cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine]
  • 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane
Classification / Family Triphenylamine derivatives, Hole-injection layer (HIL) materials, Hole transport layer (HTL) materials, Electron blocking layer (EIL) materials, Phosphorescent host materials, Thermally-activated delayed fluorescence (TADF) materials, Organic light-emitting diodes (OLEDs), Organic electronics

Product Details


Purity

>99.5% (sublimed*)

>98.0% (unsublimed)

Melting point 186 °C (lit.)
Appearance White powder/crystals

*For more details about sublimation, please refer to the Sublimed Materials.

Chemical Structure


Chemical structure of TAPCChemical structure of 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC)

Device Structure(s)


Device structure ITO(50 nm)/PEDOT:PSS(60 nm)/TAPC(20 nm)/mCP(10 nm)/mCP:BmPyPb*:4CzIPN(25 nm)/TSPO1(35 nm)/LiF(1 nm)/Al(200 nm) [1]
Colour Green green light emitting device
Max. EQE 28.6%
Max. Power Efficiency 56.6 lm W1
Device structure ITO/TAPC (40 nm)/TCTA (2 nm)/26DCzPPy:TCTA:FIrpic (0.4:0.4:0.2) (5 nm)/26DCzPPy:PPT:FIrpic (0.4:0.4:0.2) (5 nm)/3TPYMB (55 nm)/CsF (2 nm)/Al (180 nm) [2]
Colour Blue blue light emitting device
Current Efficiency @ 1000 cd/m2 42 cd/A
Power Efficiency @ 1000 cd/m2 30 lm W1

Device structure

ITO/TAPC:MoOx (10 nm, 15 wt.%)/TAPC(35 nm)/TcTa:Ir(BT)2(acac) (5 nm, 4 wt.%)/26DCzPPy:FIrpic (5 nm, 15 wt.%)/26DCzPPy:Ir(BT)2(acac) (5 nm, 4 wt.%)/BPhen (40 nm)/Cs2CO3 (1 nm)/Al (100 nm) [3]
Colour White white light emitting device
Max. EQE 13.2%
Max. Current Efficiency 35.0 cd/A
Max. Power Efficiency 30.6 lm W1

Device structure

Si/SiO2/Al (80 nm)/MoOxTAPC (43 nm, 15 wt.%)/TAPC (10 nm)/Ir(piq)3:TcTa (3 nm, 6%)/TcTa (2 nm)/FIrpic:26DCzPPy (5 nm, 12 wt.%)/BPhen (2 nm)/PO-01*:26DCzPPy (5 nm, 6 wt.%)/BPhen (40 nm)/Cs2CO3 (1 nm)/Al (2 nm)/Cu (18 nm)/TcTa (60 nm) [4]
Colour White white light emitting device
EQE @ 1000 cd/m2 10%
Current Efficiency @ 1000 cd/m2 25.6 cd/A
Power Efficiency @ 1000 cd/m2 20.1 lm W1
Device structure ITO (90 nm)/HATCN (5 nm)/TAPC (65 nm)/10 wt% fac -Ir(mpim)3 –doped TCTA (5 nm)/10 wt% fac -Ir(mpim)3 -doped 26DCzPPy (5 nm)/B3PyPB* (65 nm)/Liq (2 nm)/Al (80 nm) [5]
Colour Blue blue light emitting device
EQE @ 100 cd/m2 29.6%
Current Efficiency @ 100 cd/m2 73.2 cd/A
Power Efficiency @ 100 cd/m2 75.6 lm W1
Device structure ITO/TAPC (40 nm)/TcTa (10 nm)/5a* (4%):TcTa (5 nm)/5a* (4%):26DCzPPy (10 nm)/TmPyPB (40 nm)/LiF(1 nm)/Al(100 nm) [6]
Colour Red red light emitting device
Max. Luminance 11,023 cd/m2
Max. Current Efficiency 17.36 cd/A
Max. Power Efficiency 14.73 lm W1
Device structure ITO /TAPC/(1wt% DPB:99wt%tri-PXZ-TRZ*):CBP (15:85)/LiF/Al [7]
Colour Red red light emitting device
Max EQE 17.5%
Max. Power Efficiency 28 lm W1
Device structure ITO (180 nm)/TAPC (60 nm)/mCP:Firpic–8 wt% (10 nm)/Ir(ppz)3 (1.5 nm)/mCP:Firpic–8 wt% (10 nm)/Ir(ppz)3 (1.5 nm)/mCP:Firpic–8 wt% (10 nm)/TPBi (30 nm)/Liq (2 nm)/Al (120 nm) [8]
Colour Blue blue light emitting device
Luminance @ 200 cd/m2 32,570 cd/m2
Max. Current Efficiency 43.76 cd/A
Max. EQE 23.4%
Max. Power Efficiency 21.4 lm W−1
Device structure ITO/TAPC (50 nm)/TcTa:FIrpic (7%,10 nm)/26DCzPPy:FIrpic (20%, 10 nm)/Tm3PyPB (20 nm)/Tm3PyPB:Cs (30 nm)/LiF (1 nm)/Al (120 nm) [9]
Colour Blue blue light emitting device
Max. EQE 20.3%
Max. Power Efficiency 36.7 lm W−1
Device structure ITO/MoO3 (8 nm)/(NPB)(80 nm)/TAPC(5 nm)/TCTA:4 wt% Ir(MDQ)2(acac) (4 nm)/TCTA:2 wt% Ir(ppy)3 (4 nm)/43 wt% TCTA: 43 wt% 26DCzPPy: 14 wt% FIrpic (5 nm)/TmPyPb (40 nm)/LiF/Al [10]
Colour White white light emitting device
Max. EQE 19.4%
Max. Current Efficiency 43.6 cd/A
Max. Power Efficiency 45.8 lm W−1
Device structure ITO/PEDOT:PSS(40 nm)/TCTA:TAPC:FIrpic:Ir(ppy)3:Ir(MDQ)2(acac) (40nm)/TmPyPB (50 nm)/LiF (1 nm)/Al [11]
Colour White white light emitting device
Max. Current Efficiency 37.1 cd/A
Max. Power Efficiency 32.1 lm W−1
Device structure ITO/HAT-CN (10 nm)/HAT-CN:TAPc (2:1, 60 nm)/TAPc (20 nm)/TcTa:Be(pp)2:Ir(mppy)3 (1:1:8 wt% 10 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq (1 nm)/Al (1 nm)/HAT-CN (20 nm)/HAT-CN:TAPc (2:1, 10 nm)/TAPc (40 nm)/ TcTa:Be(pp)2:Ir(mppy)3 (1:1:8 wt% 10 nm)/Be(pp)2 (15 nm)/Be(pp)2:Liq (1:10%, 35 nm)/Liq (1 nm)/Al (100 nm) [12]
Colour Green green light emitting device
Max. Current Efficiency 241 cd/A
Max. Power Efficiency 143 lm W1
Device structure ITO/HAT-CN (10 nm)/TAPC (45 nm)/BCzSCN*:FIrpic:PO-01 (8 wt%, 0.5 wt%, 20 nm)/TmPyPB (50 nm)/Liq (2 nm)/Al (120 nm) [13]
Colour Blue blue light emitting device
Max. EQE 22%
Max. Current Efficiency 66.0 cd/A
Max. Power Efficiency 64.0 lm W1
Device structure ITO/HAT-CN (10 nm)/TAPC (45 nm)/mCP:Ir(dbi)10 wt% (20 nm)/TmPyPB (40 nm)/Liq (2 nm)/Al (120 nm) [14]
Colour Sky Blue blue light emitting device
Max. EQE 23.1%
Max. Current Efficiency 61.5 cd/A
Max. Power Efficiency 43.7 lm W1
Device structure Graphene (2–3 nm)/TAPC (30 nm)/HAT-CN (10 nm)/TAPC (30 nm)/HAT-CN (10 nm)/TAPC (30 nm)/ TCTA:FIrpic (5 nm)/DCzPPy: FIrpic (5 nm)/BmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) [15]
Colour Blue blue light emitting device
Max. EQE 15.1%
Max. Power Efficiency 14.5 lm W1
Device structure ITO/TAPC (40 nm)/TCTA:Ir(piq)3 2 wt % (1 nm)/TCTA 46 wt %:BP4mPy 46 wt %: FIrpic 8 wt % (28 nm)/BP4mPy:Ir(piq)3 3 wt % (1 nm)/BP4mPy (40 nm)/LiF (0.8 nm)/Al (150 nm) [16]
Colour White white light emitting device
Max. Luminance 19,007 cd/m2
Max EQE 11.3%
Max. Current Efficiency 15.6 cd/A
Max. Power Efficiency 16.3 lm W1

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