Bis[2-(4,6-difluorophenyl)pyridinato-C2,N](picolinato)iridium, abbreviated as FIrPic, F2IrPic or Ir(difppy)2(pic), is one of the most investigated bis-cyclometallated iridium complexes, in particular in the context of organic light emitting diodes (OLEDs). This is because of its attractive sky-blue emission, high emission efficiency, and suitable energy levels as a phosphorescent dopant material.

General Information

Product Details

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials for OLED devices page.

Chemical Structure

Device Structure(s)

Device structure	ITO/MoO3 /FIrpic:CBP/FIrpic:TPBi/LiF/Al [1]
Colour	Blue
Max. Current Efficiency	49 cd/A
Max. Power Efficiency	48 lm W−1

Device structure	ITO/NPB(40 nm)/CDBP:10% FIrpic (10 nm)/TPBI (4 nm)/CBP:5% Ir(ppy)3:3% Ir(piq)2(acac) (20 nm)/TPBI (50 nm)/LiF(0.8 nm)/Al [2]
Colour	White
Max. Luminance	42,700 cd/m2
Max. Power Efficiency	8.48 lm W−1

Device structure	ITO/NPB (50nm)/mCP (10 nm)/CbzTAZ:15 wt% FIripic (35 nm)/TAZ (30 nm)/LiF (1 nm)/Al (120 nm) [3]
Colour	Blue
Max. Luminance	40,000 cd/m2
Max. Current Efficiency	25.8 cd/A
Max. Power Efficiency	22.5 lm W−1

Device structure	ITO/TAPC (50 nm)/TcTa:FIrpic (7%,10 nm)/26DCzPPy:FIrpic (20%, 10 nm)/Tm3PyPB (20 nm)/Tm3PyPB:Cs (30 nm)/LiF (1 nm)/Al (120 nm) [4]
Colour	Blue
Max. EQE	20.3%
Max. Power Efficiency	36.7 lm W−1

Device structure	ITO /NPB (40 nm)/TCTA (5 nm)/TCTA:1 wt% fbi2Ir(acac):4 wt% FIrpic (17.5 nm)/TAZ (40 nm)/LiF/Al [5]
Colour	White
Max. EQE	13.3%
Max. Current Efficiency	37.5 cd/A

Device structure	ITO/MoO3 (3 nm)/TCTA (50 nm)/TCTA:TmPyPb:FIrpic (20 nm)/TmPyPb (30 nm)/LiF (1 nm)/Al (120 nm) [6]
Colour	Blue
Max. EQE	20.4%
Max. Power Efficiency	55.4 lm W−1

Device structure	ITO (150 nm)/NPB (70 nm)/mCP:FIrpic-8.0%:Ir(ppy)3-0.5%:Ir(piq)3-0.5% (30 nm)/TPBi (30 nm)/Liq (2 nm)/Al (120 nm) [7]
Colour	White
Max. Luminance	37,810 cd/m2
Max. Current Efficiency	48.1 cd/A

Device structure	ITO/DNTPD* (60 nm)/NPB (20 nm)/mCP (10 nm)/mCP:FIrpic (25 nm)/CBP:Ir(piq)2acac (5 nm)/BCP (5 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm) [8]
Colour	White
EQE@500 cd/m2	8.2 %
Current Efficiency @500 cd/m2	12.7 lm W−1

Device structure	ITO/MoOx (5 nm)/NPB (40 nm)/4% Y-Pt*:TCTA (20 nm)/8% FIrpic:mCP(10 nm)/8% FIrpic:UGH2 (10 nm)/BAlq (40 nm)/LiF (0.5 nm)/Al (100 nm) [9]
Colour	White
Max. EQE	16.0%
Max. Current Efficiency	45.6 cd/A
Max. Power Efficiency	35.8 lm W−1

Device structure	ITO/MoO3 (8 nm)/(NPB)(80 nm)/TAPC(5 nm)/TCTA:4 wt% Ir(MDQ)2(acac) (4 nm)/TCTA:2 wt% Ir(ppy)3 (4 nm)/43 wt% TCTA: 43 wt% 26DCzPPy: 14 wt% FIrpic (5 nm)/TmPyPb (40 nm)/LiF/Al [10]
Colour	White
Max. EQE	19.4%
Max. Current Efficiency	43.6 cd/A
Max. Power Efficiency	45.8 lm W−1

Device structure	ITO/PEDOT:PSS/TCTA:TPOB:10 wt % FIrpic/TmPyPB/Cs2CO3/Al [11]
Colour	Blue
Max. EQE	13.8%
Max. Current Efficiency	28.2 cd/A
Max. Power Efficiency	22 lm W−1

Device structure	ITO/PEDOT:PSS(40 nm)/TCTA:TAPC:FIrpic:Ir(ppy)3:Ir(MDQ)2(acac) (40nm)/TmPyPB (50 nm)/LiF (1 nm)/Al [12]
Colour	White
Max. Current Efficiency	37.1 cd/A
Max. Power Efficiency	32.1 lm W−1

Device structure	ITO/MoO3 (7nm)/NPB (85 nm)/ (PPQ)2Ir(acac):Ir(ppy)3:FIrpic:mCP/TAZ/LiF/Al [13]
Colour	White
Max. EQE	20.1%
Max. Power Efficiency	41.3 lm W−1

When fabricating devices, processing and handling materials in a glove box helps maintain their purity and maintain efficiency by avoiding contamination from particulates, moisture, and airborne impurities.

Characterisation