Charge Transport Layer Materials, High Purity Sublimed Materials, Hole Injection Layer Materials
Sublimed ａnd unsublimed grades are available for 2-TNATA
4,4＇,4＇＇-Tris[2-naphthyl(phenyl)amino]triphenylamine (2-TNATA), a starburst type molecule, gives very homogeneous thin-films that are ideal as hole-injection layers due to its low ionisation potential (of around 5.1 eV [1]).
It has been demonstrated that p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer that comprises tungsten oxide (WO3) ａnd 2-TNATA significantly improves hole injection and conductivity of the Alq3 based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), ａnd high power efficiency (3.5 lm/W) at 100 cd/m2 [2].
| CAS number | 185690-41-9 |
|---|---|
| Chemical formula | C66H48N4 |
| Molecular weight | 897.11 g/mol |
| Absorption* | λmax 326 nm (THF) |
| Fluorescence | λem 490 nm (THF) |
| HOMO/LUMO | HOMO = 5.1 eV, LUMO = 2.2 eV |
| Synonyms |
|
| Classification / Family | Triphenylamine derivatives, Hole-injection materials, Hole-transporting materials, Light-emitting diodes |
* Measurable with an optical spectrometer, see our spectrometer application notes.
| Purity |
>99.0% (sublimed) >98.0% (unsublimed) |
|---|---|
| Melting point | 246-248 °C (lit.) |
| Appearance | Pale yellow to yellow powder/crystals |
* Sublimation is a technique used to obtain ultra pure-grade chemicals, see sublimed materials.
Chemical Structure of 2-TNATA
| Device structure | ITO/2-TNATA:33% WO3 (100 nm)/NPB (10 nm)/Alq3 (30 nm)/Bphen (20 nm)/BPhen: 2% Cs (10 nm)/Al (150 nm) [2] |
|---|---|
| Colour | Green |
| Operating Voltage for 100 cd/m2 | 3.1 V |
| Current Efficiency for 20 mA/cm2 | 4.4 cd/A |
| Power Efficiency for 20 mA/cm2 | 3.3 lm W−1 |
| Device structure | ITO/2-TNATA (60 nm)/NPB (15 nm)/TAT* (30 nm)/ Alq3 (30 nm)/LiF (1 nm)/Al (200 nm) [4] |
|---|---|
| Colour |
Deep Blue 
|
| EQE at 10 mA/cm2 | 7.18 |
| Current Efficiency at 10 mA/cm2 | 3.64 cd/A |
| Power Efficiency at 10 mA/cm2 | 1.87 lm W−1 |
| Device structure | ITO/2T-NATA (17 nm)/TPAHQZn* (25 nm)/NPBX* (15 nm)/BCP (8 nm)/ Alq3 (35 nm)/LiF (0.5 nm)/Al (120 nm) [6] |
|---|---|
| Colour | White |
| Max. EQE | 17.5% |
| Max. Luminance | 12,930 cd/m2 (12 V) |
| Max. Current Efficiency | 2.66 cd/A (10 V) |
| Device structure | ITO/2T-NATA (20 nm)/NPB (60 nm)/Zn(BTZ)2:Ir(DBQ)2(acac) (80 nm)/Alq3 (70 nm)/LiF (1nm)/Al (200 nm) [7] |
|---|---|
| Colour |
Red 
|
| Max. Luminance | 25,000 cd/m2 |
| Max. Current Efficiency | 12 cd/A |
| Device structure | glass/Ag (100 nm)/ITO (90 nm)/2-TNATA (60 nm)/NPB (15 nm)/ DPVBi:DCJTB (1.2%, 30 nm)/Alq3 (20 nm)/Li (1.0 nm)/Al (2.0 nm)/Ag (20 nm)/ITO(63 nm)/SiO2 (42 nm) [8] |
|---|---|
| Colour | White |
| Max. Luminance | 14,500 cd/m2 |
| Max. Power Efficiency | 1.4 lm W−1 |
| Device structure | glass/ITO (150 nm)/2-TNATA (60 nm)/NPB (15 nm)/DPVBi:DCJTB (20 nm, 0.08%)/Alq3 (35 nm)/Li (1.0 nm)/Al (100 nm) [9] |
|---|---|
| Colour | White |
| Max. EQE | 2.47% |
| Max. Luminance | 64,200 cd/m2 |
| Max. Power Efficiency | 4.27 lm W−1 |
| Device structure | ITO (150 nm)/2T-NATA (25 nm)/NPB (5 nm) ITCTA (10 nm)/GD* 10 wt% doped GH* (20 nm)/ TPBi (30 nm)/ LiF (0.5 nm)/ AI (l00 nm) [10] |
|---|---|
| Colour | Green |
| Current Efficiency for 20 mA/cm2 | 62.6 cd/A |
| Power Efficiency for 20 mA/cm2 | 61.4 lm W−1 |
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